ST50V10100 Datasheet - STMicroelectronics

RF Power LDMOS transistor

ST50V10100 Features

* Order code FREQ VDD POUT (typ.) Gain ST50V10100 1000 MHz 50 V 100 W 18 dB

* High efficiency and linear gain operations

* Integrated ESD protection

* Large positive and negative gate/source voltage range

* In compliance with the European Directive 2002/95/EC N

ST50V10100 General Description

The ST50V10100 is a common source N-channel enhancement-mode lateral field effect RF power transistor designed for broadband commercial, Avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in class A/AB and C for all typical modulation formats. Product status link ST50.

ST50V10100 Datasheet (321.06 KB)

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Datasheet Details

Part number:

ST50V10100

Manufacturer:

STMicroelectronics ↗

File Size:

321.06 KB

Description:

Rf power ldmos transistor.
ST50V10100 Datasheet RF Power LDMOS transistor for frequencies up to 1.5 GHz M243 Epoxy sealed 1 1. Drain 2. Gate 3. Source 2 3 GADG310120180952IG.

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ST50V10100 Power LDMOS transistor STMicroelectronics

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ST50V10100 Features

ST50V10100 General Description

Datasheet Details

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