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STMicroelectronics Electronic Components Datasheet

ST50V10200 Datasheet

RF power LDMOS transistor

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ST50V10200
Datasheet
RF power LDMOS transistor for frequencies up to 1.5 GHz
M246
12
1-2 Drain
4-5 Gate
5
3
4
3 Source
Features
Order code
FREQ
VDD POUT (typ.) Gain
ST50V10200 1000 MHz
50 V
200 W
18 dB
• High efficiency and linear gain operations
• Integrated ESD protection
• Large positive and negative gate/source voltage range
• In compliance with the European Directive 2002/95/EC
ND
60%
Applications
• Broadband communications
• Industrial, scientific and medical (ISM)
• Avionics
Description
The ST50V10200 is a common-source N-channel enhancement-mode lateral field-
effect RF power transistor designed for broadband commercial, avionics and
industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C
classes for all typical modulation formats.
Product status link
ST50V10200
Product summary
Order code
ST50V10200
Marking
ST50V10200 ES
Package
M246
Packing
TBD
DS12765 - Rev 2 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

ST50V10200 Datasheet

RF power LDMOS transistor

No Preview Available !

ST50V10200
Electrical ratings
1 Electrical ratings
Symbol
BVDSS
VGS
VDD
TSTG
TJ
Table 1. Absolute maximum ratings (+25 °C)
Drain-source voltage
Gate-source voltage
Drain supply voltage
Storage temperature range
Junction temperature
Parameter
Value
110
-8/+10
18
-65 to +150
+200
Unit
V
V
V
°C
°C
Symbol
Rthj-case
Table 2. Thermal data
Parameter
Junction-case thermal resistance
TCASE = +85 °C , TJ = +200 °C, DC test
Value
0.40
Unit
°C/W
Symbol
HBM
Table 3. ESD protection
Parameter
Human body model (according to JESD22-A114)
Class
2
DS12765 - Rev 2
page 2/8


Part Number ST50V10200
Description RF power LDMOS transistor
Maker STMicroelectronics
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ST50V10200 Datasheet PDF






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