STMicroelectronics ST50V10200
The ST50V10200 is a common-source N-channel enhancement-mode lateral fieldeffect RF power transistor designed for broadband commercial, avionics and industrial applications at frequencies up to 1.5 GHz. It can be used in A/AB and C classes for all typical modulation formats.| Part No. | ST50V10200 |
|---|---|
| Datasheet | ST50V10200 Download |
| Manufacturer |  STMicroelectronics |
| Description | RF power LDMOS transistor |
| Buy | Stock & Price |
FEATURES
Order code FREQ VDD POUT (typ.) Gain ST50V10200 1000 MHz 50 V 200 W 18 dB● High efficiency and linear gain operations
● Integrated ESD protection
● Large positive and negative gate/source voltage range
● In compliance with the European Directive 2002/95/EC ND 60%
APPLICATIONS
● Broadband communications● Industrial, scientific and medical (ISM)
● Avionics
DESCRIPTION
Product status link ST50V10200 Product summary Order code ST50V10200 Marking ST50V10200 ES Package M246 Packing TBD DS12765 - Rev 2 - March 2019 For further information contact your local STMicroelectronics sales office. ST50V10200 Electrical ratings 1 Electrical ratings Symbol BVDSS VGS VDD TSTG TJ Table 1. Absolute maximum ratings (+25 °C) Drain-source voltage Gate-source voltage Drain supply voltage Storage temperature range Junction temperature Parameter Value 110 -8/+10 18 -65 to +150 +200 Unit V V V °C °C Symbol Rthj-case Table 2. Thermal data Parameter Junction-case thermal resistance TCASE = +85 °C , TJ = +200 °C, DC test Value 0.40 Unit °C/W Symbol HBM Table 3.
