STAP85025 - Transistors

ST Microelectronics

STAP85025 Datasheet Preview — Preview of STAP85025 PDF

Datasheet Details

Part number	STAP85025
Manufacturer	STMicroelectronics ↗
File Size	186.55 KB
Description	Transistors
Datasheet	STAP85025_STMicroelectronics.pdf

STAP85025 Product details

Description

STAP1 The STAP85025 is a common source N-channel, enhancement-mode lateral field-effect RF power transistor.It is designed for high gain, broadband commercial and industrial applications.It operates at 13.6 V in common source mode at frequencies of up to 1 GHz.STAP85025 boasts the excellent gain, linearity and reliability of ST’s latest LDMOS technology mounted in STAP ST advanced PowerSO-10RF package.STAP85025’s superior linearity performance makes it an ideal solution for car mobile radio

Features

Excellent thermal stability Common source configuration POUT = 25 W with 15.7 dB gain @ 870 MHz / 13.6 V Plastic package ESD protection In compliance with the 2002/95/EC European directive.

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Published: Jul 7, 2009 |