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STB130NH02L Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

The STB_P130NH02L utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

It is ideal in high performance DC-DC converter applications where efficiency is to be achieved at very high output currents.

Figure 2: Internal Schematic Diagram APPLICATIONS ■ SYNCHRONOUS RECTIFICATIONS FOR TELECOM AND COMPUTER ■ OR-ING DIODE Table 2: Ordering Information SALES TYPE STB130NH02LT4 STP130NH02L MARKING B130NH02L P130NH02L PACKAGE TO-263 TO-220 PACKAGING TAPE & REEL TUBE ABSOLUTE MAXIMUM RATINGS Symbol Vspike(1) VDS VDGR VGS ID(2) ID(2) IDM(3) Ptot EAS (4) Tstg Tj April 2005 Parameter Drain-source Voltage Rating Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Single Pulse Avalanche Energy Storage Temperature Max.

Overview

www.DataSheet4U.com N-CHANNEL 24V - 0.0034 Ω - 120A D²PAK/TO-220 STripFET™ III POWER MOSFET FOR DC-DC CONVERSION Table 1:.

Key Features

  • TYPE STB130NH02L STP130NH02L.
  • STB130NH02L STP130NH02L Figure 1:Package RDS(on) < 0.0044 Ω < 0.0044 Ω ID 90 A(2) 90 A(2) VDSS 24 V 24 V.