Datasheet Details
| Part number | STB135N10 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 184.28 KB |
| Description | N-channel Power MOSFET |
| Download | STB135N10 Download (PDF) |
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| Part number | STB135N10 |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 184.28 KB |
| Description | N-channel Power MOSFET |
| Download | STB135N10 Download (PDF) |
|
|
|
This MOSFET is the result of STMicroelectronics’s well established and consolidated STripFET technology utilizing the most recent layout optimization.
The device exhibits extremely low on-resistance, gate charge and diode’s reverse recovery charge Qrr making it the ideal switch in a very large spectrum of applications such as Automotive, Consumer, Telecom and Industrial.
INTERNAL SCHEMATIC DIAGRAM APPLICATIONS s PRIMARY SWITCH IN TELECOM DC-DC CONVERTER s HIGH-EFFICIENCY DC-DC CONVERTERS s 42V AUTOMOTIVE APPLICATIONS s SYNCHRONOUS RECTIFICATION s DIESEL INJECTION s PWM UPS AND MOTOR CONTROL ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(*) ID IDM(1) Ptot dv/dt (2) EAS (3) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Operating Junction Temperature Value 100 100 ± 20 135 96 540 150 1 TBD TBD -55 to 175 (2) ISD ≤ 40A, di/dt ≤ 600A/µs, VDD ≤BVDSS, T j ≤ TJMAX.
www.DataSheet4U.com N-CHANNEL 100V - 0.007 Ω - 135A D²PAK/TO-220 LOW GATE CHARGE STripFET™ POWER MOSFET TYPE STB135N10 STP135N10 s s s s STB135N10 STP135N10 TARGET DATA VDSS 100 V 100 V RDS(on) <0.009 Ω <0.009 Ω ID 135 A(*) 135 A(*) TYPICAL RDS(on) = 0.
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