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STB200N6F3 - 60V N-Channel Power MOSFET

General Description

This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance.

Figure 1.

Table 1.

Key Features

  • Type STB200N6F3 STI200N6F3 STP200N6F3 VDSS 60 V 60 V 60 V RDS(on) < 3.5 mΩ < 3.8 mΩ < 3.8 mΩ ID 120 A(1) 120 A(1) 120 A(1) Pw 330 W 330 W 330 W 1. Value limited by wire bonding.
  • Ultra low on-resistance.
  • 100% avalanche tested.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB200N6F3, STI200N6F3 STP200N6F3 N-channel 60 V, 3 mΩ, 120 A D2PAK, TO-220, I2PAK STripFET™ Power MOSFET Features Type STB200N6F3 STI200N6F3 STP200N6F3 VDSS 60 V 60 V 60 V RDS(on) < 3.5 mΩ < 3.8 mΩ < 3.8 mΩ ID 120 A(1) 120 A(1) 120 A(1) Pw 330 W 330 W 330 W 1. Value limited by wire bonding ■ Ultra low on-resistance ■ 100% avalanche tested Application ■ Switching applications Description This STripFET™ III Power MOSFET technology is among the latest improvements, which have been especially tailored to minimize on-state resistance providing superior switching performance. 3 2 1 TO-220 3 1 D2PAK 123 I2PAK Figure 1. Internal schematic diagram $ ' Table 1.