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STB27NM60ND - N-channel Power MOSFET

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General Description

These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology.

Utilizing a new strip-layout vertical structure, these revolutionary devices

Overview

STB27NM60ND, STW27NM60ND Automotive-grade N-channel 600 V, 0.

Key Features

  • TAB 3 1 D2PAK TO-247 3 2 1 Figure 1. Internal schematic diagram $4!"  ' 3 !-V Order codes VDS@ Tjmax RDS(on) max ID STB27NM60ND STW27NM60ND 650 V 0.16 Ω 21 A.
  • Designed for automotive.

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