Download STB30NF20L Datasheet PDF
STB30NF20L page 2
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STB30NF20L Key Features

  • Gate charge minimized
  • 100% avalanche tested
  • Excellent figure of merit (RDS- Qg)
  • Very good manufacturing repeatability
  • Very low intrinsic capacitance

STB30NF20L Description

This N-channel enhancement mode Power MOSFET benefits from the latest refinement of STMicroelectronics’ unique “single.