STB36NM60ND mosfet equivalent, n-channel power mosfet.
TAB
3 1
D2PAK
3 2 1
TO-247
Figure 1. Internal schematic diagram
$ 4!"
' 3
!-V
Order codes
STB36NM60ND STW36NM60ND
VDSS @TJ max.
650 V
RDS(on) max..
and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance an.
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