STB3NC90Z Datasheet - ST Microelectronics

N-CHANNEL Power MOSFET

STB3NC90Z Features

* OF GATE-TO-SOURCE ZENER DIODES The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device’s ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be applied from gate to souce. In this respect the 25V Zener vo

STB3NC90Z General Description

The third generation of MESH OVERLAY™ Power MOSFETs for very high voltage exhibits unsurpassed on-resistance per unit area while integrating back-toback Zener diodes between gate and source. Such arrangement gives extra ESD capability with higher ruggedness performance as requested by a large variet.

STB3NC90Z Datasheet (338.61 KB)

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STB3NC90Z

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STMicroelectronics ↗

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338.61 KB

Description:

N-channel power mosfet.
N-CHANNEL 900V - 3.2Ω - 3.5A D2PAK Zener-Protected PowerMESH™III MOSFET TYPE STB3NC90 s s STB3NC90Z VDSS 900V RDS(on) < 3.5Ω ID 3.5 A s s s TYPI.

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STB3NC90Z N-CHANNEL Power MOSFET ST Microelectronics

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STB3NC90Z Features

STB3NC90Z General Description

Datasheet Details

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