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STB45N40DM2AG Datasheet

N-channel Power MOSFET

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STB45N40DM2AG
Datasheet
Automotive-grade N-channel 400 V, 0.063 Ω typ., 38 A, MDmesh™ DM2
Power MOSFET in a D2PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
STB45N40DM2AG
VDS
400 V
RDS(on) max.
0.072 Ω
ID
38 A
PTOT
250 W
• AEC-Q101 qualified
• Fast-recovery body diode
• Extremely low gate charge and input capacitance
• Low on-resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast-
recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined
with low RDS(on), rendering it suitable for the most demanding high-efficiency
converters and ideal for bridge topologies and ZVS phase-shift converters.
Product status
STB45N40DM2AG
Product summary
Order code
STB45N40DM2AG
Marking
45N40DM2
Package
D2PAK
Packing
Tape and reel
DS11238 - Rev 4 - October 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STB45N40DM2AG Datasheet

N-channel Power MOSFET

No Preview Available !

STB45N40DM2AG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at Tcase = 25 °C
ID
Drain current (continuous) at Tcase = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total power dissipation at Tcase = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
Tstg Storage temperature range
Tj Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. ISD ≤ 38 A, di/dt = 800 A/μs, VDS peak < V(BR)DSS,VDD = 80% V(BR)DSS
3. VDS ≤ 320 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on an 1-inch² FR-4, 2 Oz copper board.
Table 3. Avalanche characteristics
Symbol
Parameter
IAR(1)
Avalanche current, repetitive or not repetitive
EAS(2)
Single pulse avalanche energy
1. Pulse width is limited by Tjmax.
2. starting Tj = 25 °C, ID = IAR, VDD = 50 V
Value
±25
38
24
110
250
50
50
-55 to 150
Unit
V
A
A
W
V/ns
°C
Value
0.5
30
Unit
°C/W
Value
7
1100
Unit
A
mJ
DS11238 - Rev 4
page 2/15


Part Number STB45N40DM2AG
Description N-channel Power MOSFET
Maker STMicroelectronics
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