STB45N50DM2AG Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STB45N50DM2AG Features

* Order code STB45N50DM2AG VDS 500 V RDS(on) max. 0.084 Ω ID 35 A PTOT 250 W

* Designed for automotive applications and AEC-Q101 qualified

* Fast-recovery body diode

* Extremely low gate charge and input capacitance

* Low on-resistance

* 100% avalanche tested

* Extremely

STB45N50DM2AG General Description

This high voltage N-channel Power MOSFET is part of the MDmesh™ DM2 fast recovery diode series. It offers very low recovery charge (Qrr) and time (trr) combined with low RDS(on), rendering it suitable for the most demanding high efficiency converters and ideal for bridge topologies and ZVS phase-shi.

STB45N50DM2AG Datasheet (734.36 KB)

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STB45N50DM2AG

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STMicroelectronics ↗

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734.36 KB

Description:

N-channel power mosfet.
STB45N50DM2AG Automotive-grade N-channel 500 V, 0.07 Ω typ., 35 A MDmesh™ DM2 Power MOSFET in a D²PAK package Datasheet - production data TAB 3 1 D2.

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STB45N50DM2AG Features

STB45N50DM2AG General Description

Datasheet Details

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STB45N50DM2AG Distributor