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STB47N60DM6AG Datasheet

Automotive-grade N-channel MOSFET

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STB47N60DM6AG
Datasheet
Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6
Power MOSFET in a D²PAK package
TAB
2
3
1
D²PAK
D(2, TAB)
G(1)
S(3)
AM01475V1
Features
Order code
STB47N60DM6AG
VDS
600 V
RDS(on) max.
80 mΩ
ID
36 A
• AEC-Q101 qualified
• Fast-recovery body diode
• Lower RDS(on) per area vs previous generation
• Low gate charge, input capacitance and resistance
• 100% avalanche tested
• Extremely high dv/dt ruggedness
• Zener-protected
Applications
• Switching applications
Description
This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fast-
recovery diode series. Compared with the previous MDmesh fast generation, DM6
combines very low recovery charge (Qrr), recovery time (trr) and excellent
improvement in RDS(on) per area with one of the most effective switching behaviors
available in the market for the most demanding high-efficiency bridge topologies and
ZVS phase-shift converters.
Product status link
STB47N60DM6AG
Product summary
Order code
STB47N60DM6AG
Marking
47N60DM6
Package
D²PAK
Packing
Tape and reel
DS12070 - Rev 4 - March 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STB47N60DM6AG Datasheet

Automotive-grade N-channel MOSFET

No Preview Available !

STB47N60DM6AG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
TJ Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 36 A, di/dt ≤ 800 A/μs, VDS (peak) < V(BR)DSS, VDD = 480 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 100 V)
Value
±25
36
23
137
250
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.5
30
Unit
°C/W
Value
7
700
Unit
A
mJ
DS12070 - Rev 4
page 2/15


Part Number STB47N60DM6AG
Description Automotive-grade N-channel MOSFET
Maker STMicroelectronics
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