STB47N60DM6AG
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
ID (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(2)
Peak diode recovery voltage slope
dv/dt(3)
MOSFET dv/dt ruggedness
TJ Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area
2. ISD ≤ 36 A, di/dt ≤ 800 A/μs, VDS (peak) < V(BR)DSS, VDD = 480 V
3. VDS ≤ 480 V
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb (1)
Thermal resistance junction-pcb
1. When mounted on FR-4 board of 1 inch², 2oz Cu.
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive
(pulse width limited by Tjmax)
Single pulse avalanche energy
(starting Tj = 25°C, ID = IAR, VDD = 100 V)
Value
±25
36
23
137
250
50
100
-55 to 150
Unit
V
A
A
A
W
V/ns
°C
Value
0.5
30
Unit
°C/W
Value
7
700
Unit
A
mJ
DS12070 - Rev 4
page 2/15
