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STB47N60DM6AG - Automotive-grade N-channel MOSFET

General Description

This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.

Key Features

  • Order code STB47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A.
  • AEC-Q101 qualified.
  • Fast-recovery body diode.
  • Lower RDS(on) per area vs previous generation.
  • Low gate charge, input capacitance and resistance.
  • 100% avalanche tested.
  • Extremely high dv/dt ruggedness.
  • Zener-protected.

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The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB47N60DM6AG Datasheet Automotive-grade N-channel 600 V, 70 mΩ typ., 36 A MDmesh™ DM6 Power MOSFET in a D²PAK package TAB 2 3 1 D²PAK D(2, TAB) G(1) S(3) AM01475V1 Features Order code STB47N60DM6AG VDS 600 V RDS(on) max. 80 mΩ ID 36 A • AEC-Q101 qualified • Fast-recovery body diode • Lower RDS(on) per area vs previous generation • Low gate charge, input capacitance and resistance • 100% avalanche tested • Extremely high dv/dt ruggedness • Zener-protected Applications • Switching applications Description This high-voltage N-channel Power MOSFET is part of the MDmesh™ DM6 fastrecovery diode series.