STB75NF75L Datasheet | STMicroelectronics

DESCRIPTION This MOSFET series realized with STMicroelectronics unique STrip FET process has specifically been designed to minimize input capacitance and gate charge. It is therefore suitable as primary switch in advanced highefficiency, high-frequency isolated DC-DC converters for Tele and puter applications. It is also intended for any applications with low gate drive requirements. 3 1 2 TO-220 INTERNAL SCHEMATIC DIAGRAM APPLICATIONS SOLENOID AND RELAY DRIVERS s DC MOTOR CONTROL s DC-DC CONVERTERS s AUTOMOTIVE ENVIRONMENT s ABSOLUTE MAXIMUM RATINGS Symbol VDS VDGR VGS ID(- ) ID IDM(- - ) Ptot dv/dt (1) EAS (2) Tstg Tj Parameter Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Single Pulse Avalanche Energy Storage Temperature Max. Operating Junction Temperature Value 75 75 ± 15 75 70 300 300 2 20 680 -55 to 175 Unit V V V A A A W W/°C V/ns m J °C (- ) Current limited by package (- - ) Pulse width limited by safe operating area. April 2002 . (1) ISD ≤ 75A, di/dt ≤ 500A/µs, VDD ≤ V (BR)DSS, Tj ≤ T JMAX. (2) Starting T j = 25 o C, ID = 37.5A, VDD = 30V 1/11 STB75NF75L/-1 STP75NF75L THERMAL DATA Rthj-case Rthj-amb Tl Thermal Resistance Junction-case Thermal Resistance Junction-ambient Maximum Lead Temperature For Soldering Purpose Max Max Typ 0.5 62.5 300 °C/W °C/W °C ELECTRICAL CHARACTERISTICS (Tcase = 25 °C unless otherwise specified) OFF Symbol V(BR)DSS IDSS Parameter Drain-source Breakdown Voltage Zero Gate Voltage Drain Current (VGS = 0) Gate-body Leakage Current (VDS = 0) Test Conditions ID = 250 µA VGS = 0 Min. 75 1 10 ±100 Typ. Max. Unit V µA µA n A VDS = Max Rating VDS = Max Rating TC = 125°C VGS = ± 15 V IGSS ON (- ) Symbol VGS(th) RDS(on) Parameter Gate Threshold Voltage Static Drain-source On Resistance Test Conditions VDS = VGS VGS = 10...