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STB7ANM60N Datasheet

N-channel Power MOSFET

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STB7ANM60N, STD7ANM60N
Datasheet
Automotive-grade N-channel 600 V, 0.8 Ω typ., 5 A MDmesh™ II
Power MOSFETs in D²PAK and DPAK packages
TAB TAB
2
1
D2PAK
3
23
1
DPAK
D(2, TAB)
Features
Order code
STB7ANM60N
STD7ANM60N
VDS
600 V
RDS(on) max.
0.9 Ω
• AEC-Q101 qualified
• 100% avalanche tested
• Low input capacitance and gate charge
• Low gate input resistance
ID
5A
Package
D²PAK
DPAK
G(1)
S(3)
Applications
• Switching applications
AM01475v1_noZen
Description
These devices are N-channel Power MOSFETs developed using the second
generation of MDmesh™ technology. These revolutionary Power MOSFETs
associate a vertical structure to the company’s strip layout to yield one of the world’s
lowest on-resistance and gate charge. They are therefore suitable for the most
demanding high-efficiency converters.
Product status link
STB7ANM60N
STD7ANM60N
Product summary
Order code
STB7ANM60N
Marking
7ANM60N
Package
D²PAK
Packing
Tape and reel
Order code
STD7ANM60N
Marking
7ANM60N
Package
DPAK
Packing
Tape and reel
DS9116 - Rev 3 - November 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STB7ANM60N Datasheet

N-channel Power MOSFET

No Preview Available !

STB7ANM60N, STD7ANM60N
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VDS Drain-source voltage
VGS Gate-source voltage
ID Drain current (continuous) at TC = 25 °C
ID Drain current (continuous) at TC = 100 °C
IDM (1)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt (2)
Peak diode recovery voltage slope
Tj Operating junction temperature range
Tstg Storage temperature range
1. Pulse width limited by safe operating area.
2. ISD ≤ 5 A, di/dt ≤ 400 A/μs, VDSpeak ≤ V(BR)DSS, VDD = 80% V(BR)DSS.
Value
600
±25
5
3
20
45
15
-55 to 150
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on 1inch² FR-4 board, 2 oz Cu.
Value
D²PAK
DPAK
2.78
35 50
Symbol
IAS
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not-repetitive (pulse
width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID =
IAS, VDD = 50 V)
Value
2
119
Unit
V
V
A
A
A
W
V/ns
°C
Unit
°C/W
°C/W
Unit
A
mJ
DS9116 - Rev 3
page 2/20


Part Number STB7ANM60N
Description N-channel Power MOSFET
Maker STMicroelectronics
PDF Download

STB7ANM60N Datasheet PDF






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