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STB7ANM60N - N-channel Power MOSFET

Description

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Features

  • TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A.
  • Designed for automotive.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STB7ANM60N, STD7ANM60N Automotive-grade N-channel 600 V, 5 A, 0.84 Ω typ., MDmesh™ II 2 Power MOSFETs in D PAK and DPAK packages Datasheet - production data Features TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A • Designed for automotive applications and AEC-Q101 qualified • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Figure 1. Internal schematic diagram ' Ć7$% Applications • Switching applications Description *  6  These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology.
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