STC03DE150 Datasheet | STMicroelectronics

Features VCS(ON) 1V n n n n Figure 1: Package RCS(ON) 0.55 W IC 1.8 A LOW EQUIVALENT ON RESISTANCE VERY FAST-SWITCH, UP TO 150 k Hz SQUARED RBSOA, UP TO 1500 V VERY LOW CISS DRIVEN BY RG = 4.7 W APPLICATION n AUX SMPS FOR THREE PHASE MAINS DESCRIPTION The STC03DE150 is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC03DE150 is designed for use in aux flyback smps for any three phase application. 1 2 TO247-4L Figure 2: Internal Schematic Diagram Electrical Symbol Table 2: Order Code Part Number STC03DE150 Marking STC03DE150 Package TO247-4L Device Structure Packaging TUBE October 2004 Rev. 2 1/9 Data Sheet 4 U . .. Table 3: Absolute Maximum Ratings Symbol VCS(SS) VBS(OS) VSB(OS) VGS IC ICM IB IBM Ptot Tstg TJ Parameter Collector-Source Voltage (VBS = VGS = 0 V) Base-Source Voltage (IC= 0, VGS = 0 V) Source-Base Voltage (IC= 0, VGS = 0 V) Gate-Source Voltage Collector Current Collector Peak Current (tp < 5ms) Base Current Base Peak Current (tp < 1ms) Total Dissipation at TC = 25 o C Storage Temperature Max. Operating Junction Temperature Value 1500 30 9 ± 20 3 6 2 4 100 -65 to 125 125 Unit V V V V A A A A W °C °C Table 4: Thermal Data Symbol Rthj-case Parameter Thermal Resistance Junction-Case Max 1 Unit o C/W Table 5: Electrical Characteristics (Tcase = 25 o C unless otherwise specified) Symbol ICS(SS) IBS(OS) ISB(OS) Parameter Collector-Source Current (VBS = VGS = 0 V) Base-Source Current (IC = 0 , VGS = 0 V) Source-Base Current (IC = 0 , VGS = 0 V) IGS(OS) Gate-Source Leakage VCS(ON) Collector-Source ON Voltage h FE DC Current Gain VGS = ± 20 V VGS = 10 V IC = 1.8 A VGS = 10 V IC = 0.7 A IC = 1.8 A IC = 0.7 A VBS(ON) Base-Source ON Voltage VGS(th) Ciss Gate Threshold Voltage Input Capacitance VCS = 1 V VCS = 1 V IB = 0.36 A IB = 70 m A VGS = 10 V VGS = 10 V IB = 0.36 A IB = 70 m A IB = 250 m A f = 1MHZ VGS = 10 V...