STC12IE90HV Datasheet | STMicroelectronics

.. Emitter Switched Bipolar Transistor ESBT® 900 V - 12 A - 0.083 Ω Preliminary Data General Features VCS(ON) 1V - IC 12A RCS(ON) 0.083 High voltage / high current Cascode configuration Low equivalent on resistance Very fast-switch up to 150 kHz Squared RBSOA up to 900V Very low Ciss driven by RG = 47Ω Very low turn-off cross over time - - - - - 1 TO247-4L HV Applications - Internal schematic diagrams Aux Smps For Three Phase Mains Description The STC12IE90HV is manufactured in Monolithic ESBT Technology, aimed to provide best performances in high frequency / high voltage applications. It is designed for use in Gate Driven based...