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STC20DE90HV - Hybrid Emitter Switched Bipolar Transistor

Description

The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology.

Features

  • Table 1. VCS(ON) 1.2 V.
  • General features IC 20 A RCS(ON) 0.06 Ω Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 900 V Very low CISS driven by RG = 47 Ω In compliance with the 2002/93/EC European Directive 1 23 4 TO247-4L HV.

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www.DataSheet4U.com STC20DE90HV Hybrid emitter switched bipolar transistor ESBT® 900 V - 20 A - 0.06 W Preliminary Data General features Table 1. VCS(ON) 1.2 V ■ ■ ■ ■ ■ General features IC 20 A RCS(ON) 0.06 Ω Low equivalent on resistance Very fast-switch, up to 150 kHz Squared RBSOA, up to 900 V Very low CISS driven by RG = 47 Ω In compliance with the 2002/93/EC European Directive 1 23 4 TO247-4L HV Description The STC20DE90HV is manufactured in a hybrid structure, using dedicated high voltage Bipolar and low voltage MOSFET technologies, aimed to providing the best performance in ESBT topology. The STC20DE90HV is designed for use in power supply forward converter and three-phase power factor corrector applications.
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