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STD11NM60ND Datasheet N-Channel Power MOSFET

Manufacturer: STMicroelectronics

General Description

AM01475v1_noZen This FDmesh II Power MOSFET with fast-recovery body diode is produced using MDmesh II technology.

Utilizing a new strip-layout vertical structure, this device

Overview

STD11NM60ND Datasheet N-channel 600 V, 370 mΩ typ., 10 A FDmesh II Power MOSFET in a DPAK.

Key Features

  • TAB 23 1 DPAK D(2, TAB) Order code VDS at TJ max. RDS(on) max. ID STD11NM60ND 650 V 450 mΩ 10 A.
  • Fast-recovery body diode.
  • Low gate charge and input capacitance.
  • Low on-resistance RDS(on).
  • 100% avalanche tested.
  • High dv/dt ruggedness.