STD130N6F7 Overview
This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. Order code STD130N6F7 AM01475v1_Tab Table 1: Device summary Marking Package 130N6F7 DPAK Packing Tape and reel October 2016 DocID028788 Rev 2 This is information on a product...
STD130N6F7 Key Features
- Among the lowest RDS(on) on the market
- Excellent FoM (figure of merit)
- Low Crss/Ciss ratio for EMI immunity
- High avalanche ruggedness
