STD13NM60N Datasheet | STMicroelectronics

Features 3 1 D²PAK 3 1 DPAK Order code VDS (@Tjmax) RDS(on) max STB13NM60N STD13NM60N 650 V 0.36 Ω ID 11 A - 100% avalanche tested - Low input capacitance and gate charge - Low gate input resistance Figure 1. Internal schematic diagram 'RU7$% - 6 Applications - Switching applications Description These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the pany’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6& Order code STB13NM60N STD13NM60N Table 1. Device summary Marking Packages 13NM60N D²PAK DPAK Packaging Tape and reel June 2015 This is information on a...