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STD1NK80Z-1 - N-channel Power MOSFET

Download the STD1NK80Z-1 datasheet PDF. This datasheet also covers the STD1NK80Z variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout.

In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.

Key Features

  • TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD1NK80Z-STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STQ1NK80ZR-AP - STN1NK80Z STD1NK80Z - STD1NK80Z-1 N-CHANNEL 800V - 13 Ω - 1 A TO-92 /SOT-223/DPAK/IPAK Zener - Protected SuperMESH™ MOSFET Table 1: General Features TYPE VDSS RDS(on) ID Pw STQ1NK80ZR-AP STN1NK80Z STD1NK80Z STD1NK80Z-1 800 V 800 V 800 V 800 V < 16 Ω < 16 Ω < 16 Ω < 16 Ω 0.3 A 0.25A 1.0 A 1.0 A 3W 2.5 W 45 W 45 W ■ TYPICAL RDS(on) = 13Ω ■ EXTREMELY HIGH dv/dt CAPABILITY ■ ESD IMPROVED CAPABILITY ■ 100% AVALANCHE TESTED ■ NEW HIGH VOLTAGE BENCHMARK ■ GATE CHARGE MINIMIZED DESCRIPTION The SuperMESH™ series is obtained through an extreme optimization of ST’s well established strip-based PowerMESH™ layout. In addition to pushing on-resistance significantly down, special care is taken to ensure a very good dv/dt capability for the most demanding applications.