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STD25NF10LT4 - N-channel MOSFET

General Description

This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge.

Key Features

  • Type VDS STD25NF10LT4 100 V.
  • Exceptional dv/dt capability.
  • 100% avalanche tested.
  • Low gate charge.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STD25NF10LT4 Datasheet N-channel 100 V, 30 mΩ typ., 25 A, STripFET™ II Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) Features Type VDS STD25NF10LT4 100 V • Exceptional dv/dt capability • 100% avalanche tested • Low gate charge Applications • Switching applications RDS(on) max. 35 mΩ ID 25 A G(1) S(3) AM01475v1_noZen Description This Power MOSFET series has been developed using STMicroelectronics' unique STripFET™ process, which is specifically designed to minimize input capacitance and gate charge. This renders the device suitable for use as primary switch in advanced high-efficiency isolated DC-DC converters for telecom and computer applications, and applications with low gate charge driving requirements.