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STD26P3LLH6 Datasheet P-CHANNEL POWER MOSFET

Manufacturer: STMicroelectronics

Overview: STD26P3LLH6 P-channel 30 V, 0.024 Ω typ., 12 A, STripFET™ VI DeepGATE™ Power MOSFET in a DPAK package Datasheet - production.

General Description

This device is a P-channel Power MOSFET th developed using the 6 generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages S(3) AM11258v1 Order code STD26P3LLH6 Table 1.

Device summary Marking Package 26P3LLH6 DPAK Packaging Tape and reel Note: For the P-channel Power MOSFETs the actual polarity of the voltages and the current must be reversed.

Key Features

  • TAB 23 1 DPAK Figure 1. Internal schematic diagram D(2 or TAB) G(1) Order code VDSS RDS(on) max ID STD26P3LLH6 30 V 0.030 Ω(1) 12 A 1. @ VGS= 10 V.
  • RDS(on).
  • Qg industry benchmark.
  • Extremely low on-resistance RDS(on).
  • High avalanche ruggedness.
  • Low gate input resistance PTOT 40 W.