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STD2HNK60Z Datasheet PDF

STMicroelectronics STD2HNK60Z

N-Channel MOSFET

Part No. STD2HNK60Z
Datasheet STD2HNK60Z Download
Manufacturer
STMicroelectronics
Description N-Channel MOSFET
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STD2HNK60Z datasheet page 1 preview

FEATURES

Order codes VDS RDS(on) max. ID STD2HNK60Z 600 V 4.8 Ω 2A STD2HNK60Z-1
● 100% avalanche tested
● Gate charge minimized
● Very low intrinsic capacitance
● Zener-protected

APPLICATIONS

● Switching applications

DESCRIPTION

These high-voltage devices are Zener-protected N-channel Power MOSFETs developed using the SuperMESH technology by STMicroelectronics, an optimization of the well-established PowerMESH. In addition to a significant reduction in onresistance, these devices are designed to ensure a high level of dv/dt capability for the most demanding applications. Product status links STD2HNK60Z STD2HNK60Z-1 Product summary Order code STD2HNK60Z Marking D2HNK60Z Package DPAK Packing Tape and reel Order code STD2HNK60Z-1 Marking D2HNK60Z Package IPAK Packing Tube DS3646 - Rev 7 - October 2021 For further information contact your local STMicroelectronics sales office. STD2HNK60Z, STD2HNK60Z-1 Electrical ratings 1 Electrical ratings Table 1. Absolute maximum ratings Symbol Paramete...
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