Datasheet4U Logo Datasheet4U.com

STD30PF03LT4 - P-channel Power MOSFET

General Description

This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process.

The resulting transistor shows extremely high packing density for low onresistance and low gate charge.

Figure 1.

Key Features

  • Type STD30PF03LT4 STD30PF03L-1 VDSS 30 V 30 V RDS(on) max < 0.028 Ω < 0.028 Ω ID 24 A 24 A.
  • Standard outline for easy automated surface mount assembly.
  • Low threshold device.
  • Low gate charge.

📥 Download Datasheet

Other Datasheets by STMicroelectronics

Part Number Description
STD30PF03L-1 P-channel Power MOSFET
STD30N10F7 N-CHANNEL POWER MOSFET
STD30N6LF6AG N-CHANNEL POWER MOSFET
STD30NF03LT N-Channel MOSFET
STD30NF04LT N-channel Power MOSFET
STD30NF06LAG N-CHANNEL POWER MOSFET
STD35P6LLF6 P-CHANNEL POWER MOSFET
STD36P4LLF6 P-CHANNEL POWER MOSFET
STD37P3H6AG P-CHANNEL POWER MOSFET
STD3LN62K3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD30PF03LT4 STD30PF03L-1 P-channel 30 V - 0.025 Ω - 24 A - DPAK / IPAK STripFET™ II Power MOSFET Features Type STD30PF03LT4 STD30PF03L-1 VDSS 30 V 30 V RDS(on) max < 0.028 Ω < 0.028 Ω ID 24 A 24 A ■ Standard outline for easy automated surface mount assembly ■ Low threshold device ■ Low gate charge Application ■ Switching applications Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process. The resulting transistor shows extremely high packing density for low onresistance and low gate charge. 3 1 DPAK IPAK 3 2 1 Figure 1. Internal schematic diagram Table 1.