This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH.
Key Features
Order code
VDS
RDS(on) max. ID
STD4NK60ZT4
600 V
2Ω
4A.
Full PDF Text Transcription for STD4NK60ZT4 (Reference)
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STD4NK60ZT4. For precise diagrams, and layout, please refer to the original PDF.
STD4NK60ZT4 Datasheet N-channel 600 V, 1.7 Ω typ., 4 A SuperMESH Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID ...
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23 1 DPAK D(2, TAB) G(1) S(3) Features Order code VDS RDS(on) max. ID STD4NK60ZT4 600 V 2Ω 4A • 100% avalanche tested • Gate charge minimized • Very low intrinsic capacitance • Zener-protected Applications • Switching applications Description AM01476v1_tab This high-voltage device is a Zener-protected N-channel Power MOSFET developed using the SuperMESH technology by STMicroelectronics, an optimization of the wellestablished PowerMESH. In addition to a significant reduction in on-resistance, this device is designed to ensure a high level of dv/dt capability for the most demanding applications.
STD4NK60ZT4 Datasheet
