Click to expand full text
www.DataSheet4U.com
STD55N4F5
N-channel 40 V, 7.1 mΩ, 40 A, DPAK STripFET™ V Power MOSFET
Features
Type STD55N4F5
■ ■ ■
VDSS 40 V
RDS(on) max < 10 mΩ
ID 55 A
Pw 60 W
3 1
Standard threshold drive 100% avalanche tested Surface mounting DPAK (TO-252)
DPAK
Applications
■
Switching applications – Automotive Figure 1. Internal schematic diagram
Description
This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronics unique “single feature size” strip-based process with less critical alignment steps and therefore a remarkable manufacturing reproducibility. The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and low gate charge.
Table 1.
STD55N4F5 Datasheet
