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STMicroelectronics Electronic Components Datasheet

STD5N52U Datasheet

Power MOSFET

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STD5N52U
Datasheet
N-channel 525 V, 1.25 Ω typ., 4.4 A, UltraFASTmesh™
Power MOSFET in a DPAK package
TAB
23
1
DPAK
D(2, TAB)
G(1)
S(3)
Features
Order code
VDS
RDS(on) max.
STD5N52U
525 V
1.50 Ω
• Outstanding dv/dt capability
• Gate charge minimized
• Very low intrinsic capacitances
• Very low RDS(on)
• Extremely low trr
ID
4.4 A
PTOT
70 W
Applications
• Switching applications
AM01476v1_tab
Description
This device is N-channel Power MOSFET developed using UltraFASTmesh™
technology, which combines the advantages of reduced on resistance, Zener gate
protection and very high dv/dt capability with an enhanced fast body-drain recovery
diode.
Product status link
STD5N52U
Product summary
Order code
STD5N52U
Marking
5N52U
Package
DPAK
Packing
Tape and reel
DS6261 - Rev 4 - December 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STD5N52U Datasheet

Power MOSFET

No Preview Available !

STD5N52U
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS
ID
ID
IDM (1)
PTOT
dv/dt
Tstg
Tj
ESD
Gate- source voltage
Drain current (continuous) at TC = 25 °C
Drain current (continuous) at TC= 100 °C
Drain current (pulsed)
Total power dissipation at TC = 25 °C
Peak diode recovery voltage slope
Storage temperature range
Operating junction temperature range
Gate-source human body model (R = 1.5 kΩ, C = 100 pF)
1. Pulse width limited by safe operating area.
2. ISD ≤ 4.4 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 80% V(BR)DSS
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
1. When mounted on a 1-inch² FR-4, 2 oz Cu board
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or non-repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
±30
4.4
2.8
17.6
70
20
-55 to 150
2.8
Unit
V
A
A
W
V/ns
°C
kV
Value
1.79
50
Unit
°C/W
Value
4.4
170
Unit
A
mJ
DS6261 - Rev 4
page 2/17


Part Number STD5N52U
Description Power MOSFET
Maker ST Microelectronics
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STD5N52U Datasheet PDF






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