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STD60N55-1 - N-channel Power MOSFET

Download the STD60N55-1 datasheet PDF. This datasheet also covers the STD60N55 variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility.

Key Features

  • Type STD60N55 STD60N55-1.
  • VDSS 55V 55V RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD60N55_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

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STD60NF55L-1 N-channel Power MOSFET STMicroelectronics
STD60NF55LA N-channel Power MOSFET STMicroelectronics
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Other Datasheets by STMicroelectronics

Part Number Description
STD60N55 N-channel Power MOSFET
STD60N55F3 N-CHANNEL Power MOSFET
STD60NF06 N-CHANNEL POWER MOSFET
STD60NF3LL N-CHANNEL POWER MOSFET
STD60NF55L N-CHANNEL POWER MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
www.DataSheet4U.com STD60N55-1 STD60N55 N-channel 55V - 8.0mΩ - 65A - DPAK - IPAK MDmesh™ low voltage Power MOSFET PRELIMINARY DATA General features Type STD60N55 STD60N55-1 ■ ■ VDSS 55V 55V RDS(on) <10.5mΩ <10.5mΩ ID 65A 65A Pw 110W 110W 3 1 Standard threshold drive 100% avalanche tested DPAK 3 2 1 IPAK Description This n-channel enhancement mode Power MOSFET is the latest refinement of STMicroelectronic unique “Single Feature Size™“ strip-based process with less critical aligment steps and therefore a remarkable manufacturing Internal reproducibility. The resulting transistor shows extremely high packing density for low on- DataSheet4U.com resistance, rugged avalanche characteristics and low gate charge.