STD6N62K3 - N-channel Power MOSFET

STMicroelectronics

General Description

This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure.

Key Features

Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω.
100% avalanche tested.
Extremely high dv/dt capability.
Very low intrinsic capacitance.
Improved diode reverse recovery characteristics.
Zener-protected ID 5.5 A PTOT 90 W.

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STD6N62K3 n-channel power mosfet by STMicroelectronics - Datasheet Preview

Datasheet Details

Part number	STD6N62K3
Manufacturer	STMicroelectronics
File Size	509.55 KB
Description	N-channel Power MOSFET
Datasheet	STD6N62K3 Datasheet

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STD6N62K3 Datasheet N-channel 620 V, 950 mΩ typ., 5.5 A MDmesh K3 Power MOSFET in a DPAK package TAB 23 1 DPAK D(2, TAB) G(1) S(3) Features Order codes VDS RDS(on) max. STD6N62K3 620 V 1.2 Ω • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected ID 5.5 A PTOT 90 W Applications • Switching applications AM01476v1_tab Description This MDmesh K3 Power MOSFET is the result of improvements applied to STMicroelectronics’ MDmesh technology, combined with a new optimized vertical structure. This device boasts an extremely low on-resistance, superior dynamic performance and high avalanche capability, rendering it suitable for the most demanding applications.