STD7ANM60N Datasheet, STMicroelectronics

TAB 2 3 1 D 2 PAK TAB 3 1 DPAK Order codes VDS @ Tjmax RDS(on) max. ID STB7ANM60N STD7ANM60N 650 V 0.9 Ω 5A
* Designed for automotive applications and AEC-Q10.

and AEC-Q101 qualified
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate input resi.

* 6 These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-res.