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STD7N52K3 Datasheet

N-channel Power MOSFET

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STD7N52K3, STP7N52K3
Datasheet
N-channel 525 V, 0.72 Ω typ., 6 A, MDmesh™ K3 Power MOSFETs
in DPAK and TO-220 packages
TAB
23
1
DPAK
TAB
TO-220 1 2 3
D(2, TAB)
G(1)
S(3)
AM01475V1
Product status links
STD7N52K3
STP7N52K3
Product summary
STD7N52K3
Order code
STD7N52K3
Marking
7N52K3
Package
DPAK
Packing
Tape and reel
STP7N52K3
Order code
STP7N52K3
Marking
7N52K3
Package
TO-220
Packing
Tube
Features
Order codes VDS RDS(on) max.
STD7N52K3
STP7N52K3
525 V
0.85 Ω
• 100% avalanche tested
• Extremely high dv/dt capability
• Very low intrinsic capacitance
• Improved diode reverse recovery characteristics
• Zener-protected
ID
6A
PTOT
90 W
Applications
• Switching applications
Description
These MDmesh™ K3 Power MOSFETs are the result of improvements applied to
STMicroelectronics’ MDmesh™ technology, combined with a new optimized vertical
structure. These devices boast an extremely low on-resistance, superior dynamic
performance and high avalanche capability, rendering them suitable for the most
demanding applications.
DS5889 - Rev 6 - August 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STD7N52K3 Datasheet

N-channel Power MOSFET

No Preview Available !

STD7N52K3, STP7N52K3
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID
Drain current (continuous) at TC = 100 °C
IDM(1)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
IAR(2)
Avalanche current, repetitive or non-repetitive
EAS(3)
Single pulse avalanche energy
ESD
Gate-source human body model (C = 100 pF, R = 1.5 kΩ)
dv/dt(4)
Peak diode recovery voltage slope
Tstg Storage temperature range
TJ Operating junction temperature range
1. Pulse width is limited by safe operating area.
2. Pulse width is limited by TJmax.
3. Starting TJ = 25 °C, ID = IAR, VDD = 50 V
4. ISD ≤ 6 A, di/dt ≤ 400 A/µs, VDS(peak) < V(BR)DSS, VDD = 80% V(BR)DSS
Value
±30
6
3.8
24
90
3
100
2.5
12
-55 to 150
Table 2. Thermal data
Symbol
Parameter
Rthj-case
Thermal resistance junction-case
Rthj-pcb(1)
Thermal resistance junction-pcb
Rthj-amb
Thermal resistance junction-ambient
1. When mounted on an 1-inch² FR-4, 2oz Cu board.
DPAK
50
Value
TO-220
1.39
62.5
Unit
V
A
A
A
W
A
mJ
kV
V/ns
°C
Unit
°C/W
°C/W
°C/W
DS5889 - Rev 6
page 2/21


Part Number STD7N52K3
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 21 Pages
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