STD7N95K5AG Datasheet | STMicroelectronics

Features Order code RDS(on)max. 950 V 1.25 Ω 9A PTOT 110 W - AEC-Q101 qualified - Industry’s lowest RDS(on) x area - Industry’s best Fo M (figure of merit) - Ultra-low gate charge - 100% avalanche tested - Zener-protected Applications - Switching applications Description This very high voltage N-channel Power MOSFET is designed using MDmesh K5 technology based on an innovative proprietary vertical structure. The result is a dramatic reduction in on-resistance and ultra-low gate charge for applications requiring superior power density and high efficiency. Product status link STD7N95K5AG Product summary (1) Order code Marking 7N95K5 Package DPAK Packing Tape and reel 1. The HTRB test was performed at 80% V(BR)DSS in pliance with AEC‑Q101 rev. C. All the other tests were performed according to rev. D. DS13720 - Rev 1 - May 2021 For further information contact your local STMicroelectronics sales office. .st. Electrical ratings Electrical ratings Table 1. Absolute maximum ratings Symbol Parameter VGS Gate- source...