Datasheet4U Logo Datasheet4U.com

STD7NM50N-1 - N-channel Power MOSFET

Download the STD7NM50N-1 datasheet PDF. This datasheet also covers the STD7NM50N variant, as both devices belong to the same n-channel power mosfet family and are provided as variant models within a single manufacturer datasheet.

General Description

This device is realized with the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on).

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (STD7NM50N_STMicroelectronics.pdf) that lists specifications for multiple related part numbers.

📁 Similar Datasheet

Part Number Description Manufacturer
STD7NM60N N-Channel MOSFET INCHANGE
STD7NM80 N-CHANNEL MOSFET ST Microelectronics
STD7N52DK3 Power MOSFET ST Microelectronics
STD7N80K5 N-Channel MOSFET INCHANGE
STD7NB20 N-CHANNEL MOSFET ST Microelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD7NM50N N-channel Power MOSFET
STD7NM60N N-channel Power MOSFET
STD7NM64N N-CHANNEL POWER MOSFET
STD7NM80-1 N-channel Power MOSFET
STD7N52K3 N-channel Power MOSFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
STD7NM50N - STD7NM50N-1 STF7NM50N - STP7NM50N N-channel 500V - 0.70Ω - 5A - TO-220 - TO-220FP - IPAK - DPAK Second generation MDmesh™ Power MOSFET Features Type STD7NM50N STD7NM50N-1 STF7NM50N STP7NM50N VDSS (@Tjmax) 550V 550V 550V 550V RDS(on) <0.78Ω <0.78Ω <0.78Ω <0.78Ω ID 1 3 2 5A 1 3 2 IPAK 5A 5A (1) 5A TO-220 1. Limited only by maximum temperature allowed 1 3 3 1 2 ■ ■ ■ 100% avalanche tested Low input capacitance and gate charge Low gate input resistance DPAK TO-220FP Description This device is realized with the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.