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STD7NM64N - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology.

This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.

Key Features

  • TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RDS(on) max. 1.05 Ω ID 5A.
  • 100% avalanche tested.
  • Low input capacitance and gate charge.
  • Low gate input resistance.

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Full PDF Text Transcription for STD7NM64N (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STD7NM64N. For precise diagrams, and layout, please refer to the original PDF.

STD7NM64N N-channel 640 V, 5 A, 0.88 Ω typ., MDmesh™ II Power MOSFET in a DPAK package Datasheet - production data Features TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RD...

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roduction data Features TAB 3 1 DPAK Order code STD7NM64N VDS 640 V RDS(on) max. 1.05 Ω ID 5A • 100% avalanche tested • Low input capacitance and gate charge • Low gate input resistance Applications • Switching applications Figure 1. Internal schematic diagram ' 7$% *  Description This device is an N-channel Power MOSFET developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge. It is therefore suitable for the most demanding high efficiency converters. 6  $0

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