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STD80N4F6 - N-CHANNEL POWER MOSFET

Description

These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages.

Table 1.

Features

  • TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram $ 4!" ' Order codes STD80N4F6 STU80N4F6 VDS 40 V RDS(on) max ID 6.0 mΩ 6.3 mΩ 80 A.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Datasheet preview – STD80N4F6

Datasheet Details

Part number STD80N4F6
Manufacturer STMicroelectronics
File Size 1.08 MB
Description N-CHANNEL POWER MOSFET
Datasheet download datasheet STD80N4F6 Datasheet
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Full PDF Text Transcription

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STD80N4F6, STU80N4F6 N-channel 40 V, 5.5 mΩ typ., 80 A STripFET™ VI DeepGATE™ Power MOSFET in DPAK and IPAK packages Datasheet − production data Features TAB 3 1 DPAK TAB IPAK 3 2 1 Figure 1. Internal schematic diagram $ 4!" ' Order codes STD80N4F6 STU80N4F6 VDS 40 V RDS(on) max ID 6.0 mΩ 6.3 mΩ 80 A • Low gate charge • Very low on-resistance • High avalanche ruggedness Applications • Switching applications Description These devices are N-channel Power MOSFETs developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFETs exhibits the lowest RDS(on) in all packages. 3 !-V Order codes STD80N4F6 STU80N4F6 Table 1.
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