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STD85N10F7AG - N-CHANNEL POWER MOSFET

General Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching.

Table 1.

Key Features

  • Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W.
  • Designed for automotive.

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Full PDF Text Transcription for STD85N10F7AG (Reference)

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STD85N10F7AG Automotive-grade N-channel 100 V, 0.0085 Ω typ., 70 A STripFET™ F7 Power MOSFET in a DPAK package Datasheet - production data TAB 3 1 DPAK Features Order cod...

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AK package Datasheet - production data TAB 3 1 DPAK Features Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W • Designed for automotive applications and AEC-Q101 qualified • Among the lowest RDS(on) on the market • Excellent figure of merit (FoM) • Low Crss/Ciss ratio for EMI immunity • High avalanche ruggedness Figure 1. Internal schematic diagram Applications • Switching applications ' 7$% *  Description This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gat

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