STD85N10F7AG datasheet, mosfet equivalent, STMicroelectronics

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Features and benefits

Order code VDS RDS(on) max STD85N10F7AG 100 V 0.010 Ω ID 70 A PTOT 85 W
* Designed for automotive applications and AEC-Q101 qualified
* Among the lowest RD.

Application

and AEC-Q101 qualified
* Among the lowest RDS(on) on the market
* Excellent figure of merit (FoM)
* Low Crss.

Description

This N-channel Power MOSFET utilizes STripFET™ F7 technology with an enhanced trench gate structure that results in very low onstate resistance, while also reducing internal capacitance and gate charge for faster and more efficient switching. 6 .

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