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N-CHANNEL 250V - 0.38Ω - 8A DPAK MESH OVERLAY™ MOSFET
PRELIMINARY DATA TYPE STD8NS25
s s s
STD8NS25
VDSS 250 V
RDS(on) < 0.45 Ω
ID 8A
TYPICAL RDS(on) = 0.38 Ω EXTREMELY HIGH dv/dt CAPABILITY 100% AVALANCHE TESTED
3 1
DESCRIPTION Using the latest high voltage MESH OVERLAY ™ process, STMicroelectronics has designed an advanced family of power MOSFETs with outstanding performance. The new patented STrip layout coupled with the Company’s proprietary edge termination structure, makes it suitable in coverters for lighting applications.