Datasheet4U Logo Datasheet4U.com

STD90N03L - N-Channel Power MOSFET

Description

This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology.

This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.

Switching applications Order codes Part numbe

Features

  • Type STD90N03L STD90N03L-1.
  • VDSS 30V 30V RDS(on) 0.0057Ω 0.0057Ω ID 80A (1) 80A (1) 3 2 1 1 3 1. Pulse width limited by safe operating area RDS(on).
  • Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device IPAK DPAK.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
STD90N4F3 N-channel Power MOSFET STMicroelectronics
STD901T High voltage NPN Darlington transistor STMicroelectronics
STD9410 N-Channel E nhancement Mode F ield E ffect Transistor SamHop Microelectronics
STD9410 N-Channel Enhancement Mode Field Effect Transistor SamHop Microelectronics
STD95N2LH5 N-channel Power MOSFET STMicroelectronics

Other Datasheets by STMicroelectronics

Part Number Description
STD90N03L-1 N-Channel Power MOSFET
STD90N02L N-CHANNEL MOSFET
STD90N02L-1 N-CHANNEL MOSFET
STD90NH02L N-CHANNEL POWER MOSFET
STD93003 HIGH VOLTAGE FAST-SWITCHING PNP POWER TRANSISTOR

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com STD90N03L STD90N03L-1 N-channel 30V - 0.005Ω - 80A - DPAK/IPAK STripFET™ III Power MOSFET General features Type STD90N03L STD90N03L-1 ■ ■ ■ ■ VDSS 30V 30V RDS(on) 0.0057Ω 0.0057Ω ID 80A (1) 80A (1) 3 2 1 1 3 1. Pulse width limited by safe operating area RDS(on)*Qg industry’s benchmark Conduction losses reduced Switching losses reduced Low threshold device IPAK DPAK Description This device utilizes the latest advanced design rules of ST’s proprietary STripFET™ technology. This is suitable for the most demanding DC-DC converter application where high efficiency is to be achieved.
Published: |