Order codes STD9NM40N STP9NM40N VDSS@TJMAX RDS(on)max. ID 450 V < 0.79 Ω 5.6 A
* 100% avalanche tested
* Low input capacitance and gate charge
* Low gate.

* Switching applications Description These devices are N-channel Power MOSFETs developed using the second generatio.

These devices are N-channel Power MOSFETs developed using the second generation of MDmesh™ technology. This revolutionary Power MOSFET associates a vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and .

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