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STDLED602 - N-channel Power MOSFET

General Description

These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology.

Table 1.

Key Features

  • Order codes VDS RDS(on)max. ID PTOT STDLED602 TAB TAB t(s)3 1 ucDPAK IPAK 3 2 1 olete ProdFigure 1. Internal schematic diagram bsD(2,TAB) roduct(s) - OG(1) 600 V STULED602 4.5 Ω 2 A 45 W.
  • 100% avalanche tested.
  • Extremely high dv/dt capability.
  • Very low intrinsic capacitance.
  • Improved diode reverse recovery characteristics.
  • Zener-protected.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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STDLED602, STULED602 N-channel 600 V, 4 Ω typ., 2 A Power MOSFET in DPAK and IPAK packages Datasheet − preliminary data Features Order codes VDS RDS(on)max. ID PTOT STDLED602 TAB TAB t(s)3 1 ucDPAK IPAK 3 2 1 olete ProdFigure 1. Internal schematic diagram bsD(2,TAB) roduct(s) - OG(1) 600 V STULED602 4.5 Ω 2 A 45 W • 100% avalanche tested • Extremely high dv/dt capability • Very low intrinsic capacitance • Improved diode reverse recovery characteristics • Zener-protected Applications • LED lighting application Description These Power MOSFETs boast extremely low onresistance, superior dynamic performance and high avalanche capability, making them suitable for the buck-boost and flyback topology. lete P S(3) Obso AM01476v1 Order codes STDLED602 STULED602 Table 1.