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STF11N65M2 Datasheet

N-channel Power MOSFET

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STF11N65M2
Datasheet
N-channel 650 V, 0.60 Ω typ., 7 A MDmesh M2 Power MOSFET
in a TO-220FP package
23
1
TO-220FP
Features
Order code
VDS
RDS(on) max.
STF11N65M2
650 V
0.68 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• 100% avalanche tested
• Zener-protected
ID
7A
PTOT
25 W
D(2)
G(1)
S(3)
Applications
• Switching applications
NG1D2S3Z
Description
This device is an N-channel Power MOSFET developed using MDmesh M2
technology. Thanks to its strip layout and an improved vertical structure, the device
exhibits low on-resistance and optimized switching characteristics, rendering it
suitable for the most demanding high efficiency converters.
Product status link
STF11N65M2
Product summary
Order code
STF11N65M2
Marking
11N65M2
Package
TO-220FP
Packing
Tube
DS10136 - Rev 3 - June 2019
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STF11N65M2 Datasheet

N-channel Power MOSFET

No Preview Available !

STF11N65M2
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
Drain current (continuous) at TC = 25 °C
ID(1)
Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total power dissipation at TC = 25 °C
dv/dt(3)
Peak diode recovery voltage slope
dv/dt(4)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, TC = 25 °C)
Tstg Storage temperature range
TJ Operating junction temperature range
1. Limited by maximum junction temperature.
2. Pulse width limited by TJ max.
3. ISD ≤ 7 A, di/dt = 400 A/μs, VDS (peak) < V(BR)DSS, VDD = 400 V.
4. VDS ≤ 520 V.
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±25
7
4.4
28
25
15
50
2.5
-55 to 150
Unit
V
A
A
W
V/ns
kV
°C
Value
5
62.5
Unit
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by TJ max)
Single pulse avalanche energy (starting TJ = 25 °C, ID = IAR, VDD = 50 V)
Value
1.5
110
Unit
A
mJ
DS10136 - Rev 3
page 2/12


Part Number STF11N65M2
Description N-channel Power MOSFET
Maker STMicroelectronics
Total Page 12 Pages
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