Datasheet Details
| Part number | STF11NM50N |
|---|---|
| Manufacturer | STMicroelectronics |
| File Size | 580.82 KB |
| Description | N-channel Power MOSFET |
| Datasheet |
 STF11NM50N Datasheet
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General Description
These devices are made using the second generation of MDmesh™ technology.
This revolutionary Power MOSFET associates a new vertical structure to the company’s strip layout to yield one of the world’s lowest on-resistance and gate charge.
Key Features
- Order codes STD11NM50N STF11NM50N STP11NM50N.
- VDSS @TJmax RDS(on) max < 0.47 Ω ID 1 3 3 550 V 8.5 A DPAK 1 2 TO-220 100% avalanche tested Low input capacitance and gate charge Low gate input resistance TO-220FP 3 1 2.
