STMicroelectronics STF18NM60ND
N-channel Power MOSFET
FEATURES
Order codes STB18NM60ND STF18NM60ND STP18NM60ND STW18NM60ND VDSS @ TJmax 650 V RDS(on) max ID <0.29 Ω 13 A● The worldwide best RDS(on)* area amongst the fast recovery diode devices
● 100% avalanche tested
● Low input capacitance and gate charge
● Low gate input resistance
● Extremely high dv/dt and avalanche capabilities
APPLICATIONS
● Switching applicationsDESCRIPTION
These FDmesh™ II Power MOSFETs with intrinsic fast-recovery body diode are produced using the second generation of MDmesh™ technology. Utilizing a new strip-layout vertical structure, these revolutionary devices feature extremely low on-resistance a