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STF20NM50D Datasheet N-channel Power MOSFET

Manufacturer: STMicroelectronics

Overview: STP20NM50FD STF20NM50D - STB20NM50FD N-CHANNEL 500V - 0.22Ω - 20A TO-220/TO-220FP/D2PAK FDmesh™ Power MOSFET (with FAST DIODE) TYPE STP20NM50FD STF20NM50D STB20NM50FD s VDSS 500V 500V 500V RDS(on) <0.25Ω <0.25Ω <0.25Ω Rds(on)*Qg 8.36 Ω*nC 8.36 Ω*nC 8.36 Ω*nC ID 20 A 20 A 20 A 3 1 2 1 3 2 TYPICAL RDS(on) = 0.22Ω s HIGH dv/dt AND AVALANCHE CAPABILITIES s 100% AVALANCHE TESTED www.DataSheet4U.

General Description

The FDmesh™ associates all advantages of reduced on-resistance and fast switching with an intrinsic fast-recovery body diode.

It is therefore strongly recommended for bridge topologies, in particular ZVS phase-shift converters.

INTERNAL SCHEMATIC DIAGRAM s APPLICATIONS ZVS PHASE-SHIFT FULL BRIDGE CONVERTERS FOR SMPS AND WELDING EQUIPMENT ORDERING INFORMATION SALES TYPE STP20NM50FD STF20NM50D STB20NM50FD MARKING P20NM50FD F20NM50D B20NM50FD PACKAGE TO-220 TO-220FP D2PAK PACKAGING TUBE TUBE TAPE & REEL November 2003 1/11 STP20NM50FD - STF20NM50D - STB20NM50FD ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value STP20NM50FD STB20NM50FD VDS VDGR VGS ID ID IDM ( ) PTOT dv/dt (1) Drain-source Voltage (VGS = 0) Drain-gate Voltage (RGS = 20 kΩ) Gate- source Voltage Drain Current (continuous) at TC = 25°C Drain Current (continuous) at TC = 100°C Drain Current (pulsed) Total Dissipation at TC = 25°C Derating Factor Peak Diode Recovery voltage slope Insulation Winthstand Voltage (DC) Storage Temperature Max.

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