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STF25N60M2-EP Datasheet

N-channel Power MOSFET

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STF25N60M2-EP
Datasheet
N-channel 600 V, 0.175 Ω typ., 18 A MDmesh™ M2 EP
Power MOSFET in a TO-220FP package
23
1
TO-220FP
D(2)
G(1)
Features
Order code
VDS at TJ max.
RDS(on) max.
STF25N60M2-EP
650 V
0.188 Ω
• Extremely low gate charge
• Excellent output capacitance (COSS) profile
• Very low turn-off switching losses
• 100% avalanche tested
• Zener-protected
Applications
• Switching applications
• Tailored for Very high frequency converters (f > 150 kHz)
ID
18 A
Description
This device is an N-channel Power MOSFET developed using MDmesh™
S(3) AM15572v1_no_tab M2 enhanced performance (EP) technology. Thanks to its strip layout and an
improved vertical structure, the device exhibits low on-resistance, optimized switching
characteristics with very low turn-off switching losses, rendering it suitable for the
most demanding very high frequency converters.
Product status link
STF25N60M2-EP
Product summary
Order code
STF25N60M2-EP
Marking
25N60M2EP
Package
TO-220FP
Packing
Tube
DS10758 - Rev 6 - May 2018
For further information contact your local STMicroelectronics sales office.
www.st.com


STMicroelectronics Electronic Components Datasheet

STF25N60M2-EP Datasheet

N-channel Power MOSFET

No Preview Available !

STF25N60M2-EP
Electrical ratings
1 Electrical ratings
Table 1. Absolute maximum ratings
Symbol
Parameter
VGS Gate-source voltage
VGS Transient gate-source voltage (tp ≤ 10 ns)
ID(1) Drain current (continuous) at TC = 25 °C
ID(1) Drain current (continuous) at TC = 100 °C
IDM(2)
Drain current (pulsed)
PTOT
Total dissipation at TC = 25 °C
dv/dt(3)
Peak diode recovery voltage slope
dv/dt(4)
MOSFET dv/dt ruggedness
VISO
Insulation withstand voltage (RMS) from all three leads to external heat sink
(t = 1 s, TC = 25 °C)
Tstg Storage temperature range
Tj Operating junction temperature range
1. Limited by maximum junction temperature
2. Pulse width limited by safe operating area
3. ISD ≤ 18 A, di/dt ≤ 400 A/µs, VDS peak < V(BR)DSS, VDD = 400 V
4. VDS ≤ 480 V
Symbol
Rthj-case
Rthj-amb
Table 2. Thermal data
Parameter
Thermal resistance junction-case
Thermal resistance junction-ambient
Value
±25
±35
18
11.3
72
30
15
50
2500
-55 to 150
Value
4.2
62.5
Unit
V
V
A
A
A
W
V/ns
V/ns
V
°C
Unit
°C/W
°C/W
Symbol
IAR
EAS
Table 3. Avalanche characteristics
Parameter
Avalanche current, repetitive or not repetitive (pulse width limited by Tjmax)
Single pulse avalanche energy (starting Tj = 25 °C, ID = IAR, VDD = 50 V)
Value
3.5
200
Unit
A
mJ
DS10758 - Rev 6
page 2/14


Part Number STF25N60M2-EP
Description N-channel Power MOSFET
Maker STMicroelectronics
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STF25N60M2-EP Datasheet PDF






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