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STF31N65M5 - N-Channel Power MOSFET

General Description

These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal layout.

Key Features

  • Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.148 Ω STW31N65M5.
  • Extremely low RDS(on).
  • Low gate charge and input capacitance.
  • Excellent switching performance.
  • 100% avalanche tested ID 22 A Package D2PAK TO-220FP TO-220 TO-247 G(1).

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Full PDF Text Transcription for STF31N65M5 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for STF31N65M5. For precise diagrams, and layout, please refer to the original PDF.

STB31N65M5, STF31N65M5 STP31N65M5, STW31N65M5 Datasheet N-channel 650 V, 0.124 Ω, 22 A, MDmesh M5 Power MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages TAB 3 1 D2P...

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wer MOSFETs in D2PAK, TO‑220FP, TO‑220 and TO-247 packages TAB 3 1 D2PAK TAB 3 2 1 TO-220FP TO-220 1 2 3 TO-247 3 2 1 D(2, TAB) Features Order code VDS @ TJMAX RDS(on ) max. STB31N65M5 STF31N65M5 STP31N65M5 710 V 0.148 Ω STW31N65M5 • Extremely low RDS(on) • Low gate charge and input capacitance • Excellent switching performance • 100% avalanche tested ID 22 A Package D2PAK TO-220FP TO-220 TO-247 G(1) Applications • Switching applications S(3) Description AM01475v1_noZen These devices are N-channel Power MOSFETs based on the MDmesh M5 innovative vertical process technology combined with the well-known PowerMESH horizontal l

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