STFI10NK60Z Datasheet - STMicroelectronics

N-CHANNEL POWER MOSFET

STFI10NK60Z Features

* Type STFI10NK60Z VDSS 600 V RDS(on) max ID < 0.75 Ω 10 A PTOT 35 W

* Fully insulated and low profile package with increased creepage path from pin to heatsink plate

* Extremely high dv/dt capability

* 100% avalanche tested

* Gate charge minimized 1 2 3 I²PAKFP (TO-281) Appli

STFI10NK60Z General Description

This device is an N-channel Zener-protected Power MOSFET developed using STMicroelectronics' SuperMESH™ technology, achieved through optimization of ST's wellestablished strip-based PowerMESH™ layout. In addition to a significant reduction in onresistance, this device is designed to ensure a high le.

STFI10NK60Z Datasheet (218.97 KB)