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STFI260N6F6 - N-CHANNEL POWER MOSFET

General Description

This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure.

The resulting Power MOSFET exhibits the lowest RDS(on) in all packages.

Figure 1.

Key Features

  • Order codes STFI260N6F6 VDSS 60 V RDS(on) max < 0.003 Ω ID 80 A.
  • Fully insulated and low profile package with increased creepage path from pin to heatsink plate.
  • Low gate charge.
  • Very low on-resistance.
  • High avalanche ruggedness.

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Full PDF Text Transcription for STFI260N6F6 (Reference)

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STFI260N6F6 N-channel 60 V, 0.0024 Ω, 80 A STripFET™ VI DeepGATE™ Power MOSFET in I²PAKFP package Datasheet — preliminary data Features Order codes STFI260N6F6 VDSS 60 V ...

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tasheet — preliminary data Features Order codes STFI260N6F6 VDSS 60 V RDS(on) max < 0.003 Ω ID 80 A ■ Fully insulated and low profile package with increased creepage path from pin to heatsink plate ■ Low gate charge ■ Very low on-resistance ■ High avalanche ruggedness Application ■ Switching applications Description This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 3 I²PAKFP (TO-281) Figure 1. Internal schematic diagram $ ' 3 !-V Table 1.

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