STFI260N6F6 Overview
This device is an N-channel Power MOSFET developed using the 6th generation of STripFET™ DeepGATE™ technology, with a new gate structure. The resulting Power MOSFET exhibits the lowest RDS(on) in all packages. 12 3 I²PAKFP (TO-281) Figure.
STFI260N6F6 Key Features
- Fully insulated and low profile package with increased creepage path from pin to heatsink plate
- Low gate charge
- Very low on-resistance
- High avalanche ruggedness
- Switching